Surface defects in as-grown Ti3Al + V

Development of Al-Ti-N Composite Coatings on Commercially Pure Ti Surface by Tungsten Inert Gas Process

The present work aims to modify surface properties of pure Ti by development of Ti-Al-N intermetallic composite coatings. In this regard, tungsten inert gas (TIG) cladding process was carried out using Al 1100 as filler rod with Ar and Ar+N2 as shielding gases. Phase and structure of the samples were investigated by X-ray diffraction (XRD) technique, optical microscopy (OM) and scanning electro...

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Effect of Buffer Layer and Iii/v Ratio on the Surface Morphology of Gan Grown by Mbe

The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can b...

Field emission characteristics of multiwalled carbon nanotubes grown at low temperatures using electron cyclotron resonance chemical vapor deposition

Vertically aligned multiwalled carbon nanotubes were synthesized by electron cyclotron resonance chemical vapor deposition on Ni-coated glass substrates at temperatures as low as 400 °C. Negative self-biases were induced to the substrates by radio frequency plasma to give ion bombardment to the growing surface. An increase of self-bias voltages from 250 to 2200 V resulted in an evolution of the...

Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Deep-level transient spectroscopy ~DLTS! measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy ~LT-MBE! at 320 °C. In the LT-MBE as-grown samples, two dominant divacancy-related complex defects, of which the possible origins are suggested as P – V (E center)1V – V (0/2) and...